TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.10
1500
www.din-tek.jp
DTE2311
0.08
C - Capacitance (pF)
V
GS
= 2.5 V
0.06
1200
C
iss
900
R
DS(on)
-
0.04
V
GS
= 4.5 V
600
C
oss
0.02
300
C
rss
0.00
0
4
8
12
16
20
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 4.8 A
1.4
R
DS(on)
- On-Resistance
(Normalized)
1.6
V
GS
= 4.5 V
I
D
= 4.8 A
Capacitance
5
4
1.2
3
1.0
2
0.8
1
0.6
- 50
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
0.15
On-Resistance vs. Junction Temperature
10
T
J
= 150 °C
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
0.12
I
S
- Source Current (A)
0.09
I
D
= 4.8 A
0.06
0.03
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3
DINTEK [ DinTek Semiconductor Co,.Ltd ]
