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SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.35 A, di/dt = 100 A/µs
V
DD
= - 6 V, R
L
= 6
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
f = 1 MHz
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 4.2 A
10
1.8
3
7.7
45
60
70
35
65
70
90
110
55
ns
Ω
15
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
=
- 4.5 V, I
D
= - 4.2 A
V
GS
= - 2.5 V, I
D
= - 3.6 A
V
DS
= - 5 V, I
D
= - 4.2 A
I
S
= - 1.35 A, V
GS
= 0 V
- 20
0.032
0.053
14
- 0.77
- 1.1
0.045
0.072
- 0.6
- 1.5
± 100
-1
- 25
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTE2311
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 4.5 thru 3 V
16
16
I
D
- Drain Current (A)
20
I
D
- Drain Current (A)
2.5 V
12
12
8
2V
4
8
T
C
= 125 °C
25 °C
- 55 °C
4
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
DINTEK [ DinTek Semiconductor Co,.Ltd ]
