D5&
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SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 0.6
- 1.5
100
- 1
V
VDS = 0 V, VGS
=
8 V
Gate-Body Leakage
nA
VDS = - 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V, TJ = 70 °C
VDS = - 5 V, VGS = - 4.5 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
- 25
On-State Drain Currenta
- 20
VGS = - 4.5 V, ID = - 4.8 A
0.032
0.053
14
0.040
0.070
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = - 2.5 V, ID = - 3.6 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 5 V, ID = - 4.8 A
IS = - 1.35 A, VGS = 0 V
S
V
VSD
- 0.77
- 1.1
15
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
10
1.8
3
VDS = - 6 V, VGS = - 4.5 V, ID = - 4.8 A
f = 1 MHz
nC
7.7
45
60
70
35
65
Ω
td(on)
tr
td(off)
tf
70
90
V
DD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
110
55
ns
trr
IF = - 1.35 A, di/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
16
12
8
20
16
12
8
V
GS
= 4.5 thru 3 V
2.5 V
T
= 125 °C
2 V
C
4
4
25 °C
- 55 °C
2.0
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
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