D5&
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P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free
VDS (V)
RDS(on) (Ω)
ID (A)
- 4.8
- 3.6
0.040 at VGS = - 4.5 V
0.070 at VGS = - 2.5 V
- 12
RoHS
COMPLIANT
S*
TO-226AA
(TO-92)
1
S
G
G
D
2
3
D
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 12
8
V
VGS
TA = 25 °C
TA = 70 °C
- 4.8
- 3.9
- 4.0
- 3.2
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
- 20
Continuous Source Current (Diode Conduction)a
- 1.35
1.5
- 0.95
1.05
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 70 °C
1.0
0.67
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
65
Maximum
Unit
t ≤ 10 s
83
120
52
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
100
43
°C/W
RthJF
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
1