DA14580
FINAL
Bluetooth Low Energy 4.2 SoC
Note 7: The device should not be exposed for prolonged periods of time to voltages between the Recommended Operating Conditions and the
Absolute Maximum Ratings range.
Table 258: Recommended Operating Conditions
Parameter
Description
Conditions
Min
Typ
Max
Unit
V
programming voltage
Supply voltage on pin
VPP during OTP pro-
6.6
6.7
6.8
V
PP
gramming; T 50 C
J
V
(VBAT1V) battery supply voltage
Supply voltage on
VBAT1V in a boost con-
verter application
(VBAT3V is second out-
put of boost-converter in
this case)
0.9
3.3
3.3
V
BAT
V
V
(VBAT3V) battery supply voltage
Supply voltage on
VBAT3V and VBAT_RF
in a buck-converter
application, pin VBAT1V
is connected to ground
2.35
(Note 8)
V
V
BAT
(default)
voltage on a pin
voltage on a pin
Voltage between pin and
GND
0
min(3.3,V
BAT_RF+
0.2)
PIN
V
V
(1V2)
XTAL32Km, XTAL16Mp,
XTAL16Mm
0
0
1.2
V
V
PIN
(VDCDC_ voltage on a pin
ambient temperature
Supply voltage on
VDCDC_RF
3.3
PIN
RF)
T
-40
85
°C
A
Note 8: Cold boot should not be performed if voltage is less than 2.5 V because of possible corruption during OTP data mirroring. Trim values pro-
grammed in the OTP as well as the application image, should be copied into RAM while VBAT3V >= 2.5 V.
Table 259: DC Characteristics
Parameter
Description
Conditions
Min
Typ
Max
Unit
I
(DP_SLP)_ battery supply current
Boost configuration in
deep-sleep with 1 kB
retention RAM active,
running from RC32K
oscillator at lowest fre-
quency
0.48
A
BAT
BOOST_1kB
I
(DP_SLP)_ battery supply current
Boost configuration in
deep-sleep with 2 kB
retention RAM active,
running from XTAL32K
oscillator
0.55
0.7
A
A
A
BAT
BOOST_2kB
I
(DP_SLP)_ battery supply current
Typical boost-applica-
tion in deep-sleep with 8
kB retention RAM active,
running from XTAL32K
oscillator
2
BAT
BOOST_8kB
I
(EXT_SLP) battery supply current
Typical boost-applica-
tion in extended-sleep
mode with 42 kB (Sys-
RAM) and 1 kB
1.37
BAT
_BOOST_43K
B
(RetRAM) retained
Datasheet
Revision 3.4
09-Nov-2016
CFR0011-120-01
142 of 155
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