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DS1012M-2 参数 Datasheet PDF下载

DS1012M-2图片预览
型号: DS1012M-2
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Delay Line, 2-Func, 1-Tap, True Output, CMOS, PDIP8, 0.300 INCH, DIP-8]
分类和应用: 光电二极管逻辑集成电路延迟线
文件页数/大小: 7 页 / 53 K
品牌: DALLAS [ DALLAS SEMICONDUCTOR ]
 浏览型号DS1012M-2的Datasheet PDF文件第1页浏览型号DS1012M-2的Datasheet PDF文件第2页浏览型号DS1012M-2的Datasheet PDF文件第3页浏览型号DS1012M-2的Datasheet PDF文件第4页浏览型号DS1012M-2的Datasheet PDF文件第6页浏览型号DS1012M-2的Datasheet PDF文件第7页  
DS1012  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on Any Pin Relative to Ground  
Operating Temperature  
-1.0V to +7.0V  
0°C to 70°C  
Storage Temperature  
Soldering Temperature  
-55°C to +125°C  
260°C for 10 seconds  
* This is a stress rating only and functional operation of the device at these or any other conditions above those  
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods of time may affect reliability.  
DC ELECTRICAL CHARACTERISTICS  
(0°C to 70°C; VCC = 5.0V ± 5%)  
PARAMETER  
SYMBOL  
TEST  
MIN  
4.75  
2.2  
TYP  
MAX  
UNITS NOTES  
Supply Voltage  
V
CC  
5.00  
5.25  
V
V
1
1
1
High Level Input Voltage  
Low Level Input Voltage  
Input Leakage Current  
Active Current  
V
IH  
V
+0.5  
CC  
V
IL  
-0.5  
-1.0  
0.8  
V
I
I
0.0V < V < V  
CC  
1.0  
µA  
mA  
I
I
I
V
= MAX;  
40.0  
70.0  
2
5
CC1  
CC  
PERIOD = MIN  
Quiescent Current  
V
= MAX.  
10  
µA  
CC2  
CC  
High Level Output Current  
I
V
V
= MIN  
= 2.4V  
-1.0  
mA  
OH  
CC  
OH  
Low Level Output Current  
I
OL  
V
V
= MIN.  
= 0.5V  
8.0  
mA  
CC  
OL  
AC ELECTRICAL CHARACTERISTICS  
(TA = 25°C; VCC = 5V ± 5%)  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
NOTES  
Input Pulse Width  
t
WI  
ns  
6
Input to Output (leading edge)  
t
t
, t  
, t  
D3 D4  
,
ns  
3, 4  
D1 D2  
Power-up Time  
t
0
ns  
ns  
7
PU  
Period  
2(t )  
WI  
CAPACITANCE  
PARAMETER  
(TA = 25°C)  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
NOTES  
Input Capacitance  
C
5
10  
pF  
IN  
021798 5/7