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CSMASS1B 参数 Datasheet PDF下载

CSMASS1B图片预览
型号: CSMASS1B
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0Amp 。表面贴装肖特基势垒二极管 [1.0Amp. Surface Mount Schottky Barrier Diodes]
分类和应用: 二极管
文件页数/大小: 3 页 / 142 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号CSMASS1B的Datasheet PDF文件第2页浏览型号CSMASS1B的Datasheet PDF文件第3页  
CYStech Electronics Corp.
1.0Amp. Surface Mount Schottky Barrier Diodes
Spec. No. : C338AS
Issued Date : 2004.03.10
Revised Date :
Page No. : 1/1
CSMASS1XAS Series
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
Glass passivated structure
Mechanical Data
Case: Molded plastic SMA.
Solderability : MIL-STD-202 method 208 guaranteed
Epoxy: UL94V-0 rate flame retardant
Polarity: Color band denotes cathode end.
Mounting position: Any.
Weight: 0.064 gram
Maximum Ratings and Electrical Characteristics
(
Rating at 25°C ambient temperature unless otherwise specified.
resistive or inductive load.
Parameter
Single phase, half wave, 60Hz,
For capacitive load, derate current by 20%. )
Type
Symbol CSMA CSMA CSMA CSMA CSMA CSMA CSMA Units
SS12 SS13 SS14 SS15 SS16 SS18 SS1B
V
RRM
20
30
40
50
60
80
100
V
V
RMS
14
21
28
35
42
56
70
V
V
R
20
30
40
50
60
80
100
V
V
F
I
O
I
FSM
0.55
1
30
0.75
0.82
V
A
A
Repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum instantaneous forward
voltage @ I
F
=1A
(Note 1)
Maximum average forward rectified
current @ T
L
=100
Peak forward surge current @8.3ms
single half sine-wave superimposed
on rated load (JEDEC method)
Maximum DC reverse current
at rated DC blocking T
J
=25
Voltage
T
J
=100
Typical thermal resistance, Junction
to lead
Typical diode junction capacitance
@ f=1MHz and applied 4V reverse
voltage
Storage temperature
Operating temperature
CSMASS1XAS
I
R
R
th, JL
C
J
Tstg
T
J
0.5
10
20
110
-55 ~ +150
-55 ~ +125
mA
/W
pF
CYStek Product Specification