Spec. No. : C855T3
Issued Date : 2004.12.15
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
Unit
Test Conditions
I =50 A, I =0
BVCBO
180
-
-
V
µ
C
E
BVCEO
BVEBO
ICBO
160
-
-
V
IC=1mA, IB=0
5
-
-
-
V
I =50 A, I =0
µ
E
C
-
1
µA
µA
V
VCB=160V, IE=0
IEBO
-
-
-
1
VEB=4V, IC=0
*VCE(sat)
*VBE(on)
hFE1
-
0.6
1.5
320
-
IC=1A, IB=100mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=150mA
-
-
V
60
30
-
-
-
hFE2
-
-
fT
140
27
-
-
MHz
pF
Cob
-
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
Range
P
Q
R
82~190
120~200
180~320
BTD1857AT3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
