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BTD1857AD3 参数 Datasheet PDF下载

BTD1857AD3图片预览
型号: BTD1857AD3
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面晶体管 [Silicon NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 168 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTD1857AD3的Datasheet PDF文件第1页浏览型号BTD1857AD3的Datasheet PDF文件第2页浏览型号BTD1857AD3的Datasheet PDF文件第4页  
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Tj=125℃
Spec. No. : C855D3
Issued Date : 2004.09.21
Revised Date :2005.04.20
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
100
Tj=75℃
Tj=25℃
100
Tj=125℃
Tj=75℃
Tj=25℃
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
Tj=25℃
On Voltage vs Collector Current
1000
Tj=25℃
Saturation Voltage---(mV)
Tj=125℃
Tj=75℃
On Voltage---(mV)
Tj=125℃
Tj=75℃
VBE(SAT)@IC=10IB
VBE(ON)@VCE=5V
100
1
10
100
1000
10000
Collector Current---IC(mA)
100
1
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTD1857AD3
Power Derating Curve
25
20
15
10
5
0
0
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification
Power Dissipation---PD(W)