CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855D3
Issued Date : 2004.09.21
Revised Date :2005.04.20
Page No. : 1/4
BTD1857AD3
Description
•
High BV
CEO
•
High current capability
•
Complementary to BTB1236AD3
•
Pb-free package
Symbol
BTD1857AD3
Outline
TO-126ML
B:Base
C:Collector
E:Emitter
E
EC
C B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @T
A
=25℃
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
180
160
5
1.5
3
1
20
150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
BTD1857AD3
CYStek Product Specification