CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ T
A
=25°C
Power Dissipation @ T
C
=25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Spec. No. : C821J3
Issued Date : 2005.03.29
Revised Date :2005.04.15
Page No. : 2/5
Limits
120
100
6
4
8
(Note 1)
1.2
1
20
125
6.25
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
t
on
t
stg
t
f
Min.
120
100
6
-
-
-
-
-
180
120
-
-
-
-
-
Typ.
-
-
-
-
-
110
150
0.9
-
-
180
40
100
900
50
Max.
-
-
-
1
1
200
400
1.2
820
-
-
-
-
-
-
Unit
V
V
V
µA
µA
mV
mV
V
-
-
MHz
pF
ns
ns
ns
Test Conditions
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
C
=10µA, I
C
=0
V
CB
=100V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=50mA
I
C
=2A, I
B
=200mA
I
C
=2A, I
B
=200mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=3A
V
CE
=10V, I
C
=500mA
V
CB
=10V, f=1MHz
V
CC
=50V, I
C
=10I
B
1=-10I
B
2=2A,
R
L
=25
Ω
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
41
Classification of h
FE
1
Rank
Range
R
180~390
S
270~560
T
390~820
BTD1816J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
