BTD1816J3 参数 Datasheet PDF下载

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor

Spec. No. : C821J3

Issued Date : 2005.03.29

Revised Date :2005.04.15

Page No. : 1/5

BTD1816J3

Features

•

Low collector-to-emitter saturation voltage

•

High-speed switching

•

Large current capability

•

Good linearity of h

FE

•

High f

T

Applications

•

Suitable for relay drivers, high speed inverters, converters, and other high current switching applications.

Symbol

BTD1816J3

Outline

TO-252

B：Base

C：Collector

E：Emitter

B C

B C EE

BTD1816J3

CYStek Product Specification