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BTB1386M3 参数 Datasheet PDF下载

BTB1386M3图片预览
型号: BTB1386M3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT PNP外延平面晶体管 [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 172 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
VCE=2V
Spec. No. : C815M3
Issued Date : 2005.03.25
Revised Date : 2005.10.20
Page No. : 3/5
Saturation Voltage vs Collector Current
10000
VCESAT
1000
IC=100IB
IC=40IB
IC=50IB
Current Gain---HFE
100
VCE=1V
100
IC=30IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
10
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VBESAT@IC=10IB
Output Characteristics
5
Collector Current---IC(A)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
IB=20mA
1000
IB=10mA
IB=6mA
IB=4mA
IB=2mA
IB=0
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
2
4
Collector-to-Emitter Voltage---VCE(V)
6
Output Characteristics
9
8
IB=50mA
Power Derating Curves
2.5
Power Dissipation---PD(W)
Collector Current---IC(A)
7
6
5
4
3
2
1
0
0
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
IB=0
2
See note 2 on page 1
1.5
1
0.5
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
50
100
150
Ambient Temperature---TA(℃)
200
BTB1386M3
CYStek Product Specification