CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C815M3
Issued Date : 2005.03.25
Revised Date : 2005.10.20
Page No. : 1/5
BTB1386M3
Features
•
Low V
CE(sat)
, V
CE(sat)
=-0.25 V (typical), at I
C
/ I
B
= -3A / -60mA
•
Excellent DC current gain characteristics
•
Complementary to BTD2098M3
•
Pb-free package
Symbol
BTB1386M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : 1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Pd
Tj
Tstg
Limits
-30
-20
-6
-5
-10
(Note 1)
0.5
2
(Note 2)
150
-55~+150
Unit
V
V
V
A
W
°C
°C
2. When mounted on a 40
×40 ×0.7
mm ceramic board.
BTB1386M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
