CY8C24x23A Final Data Sheet
3. Electrical Specifications
3.3
3.3.1
DC Electrical Characteristics
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C
≤
T
A
≤
85°C, 3.0V to 3.6V and -40°C
≤
T
A
≤
85°C, or 2.4V to 3.0V and -40°C
≤
T
A
≤
85°C, respectively. Typical parameters
apply to 5V, 3.3V, and 2.7V at 25°C and are for design guidance only.
Table 3-4. DC Chip-Level Specifications
Symbol
Vdd
I
DD
Supply Voltage
Supply Current
Description
Min
2.4
–
–
5
Typ
Max
5.25
8
V
mA
Units
Notes
See DC POR and LVD specifications,
Conditions are Vdd = 5.0V, T
A
= 25
o
C, CPU = 3
MHz, SYSCLK doubler disabled, VC1 = 1.5
MHz, VC2 = 93.75 kHz, VC3 = 93.75 kHz, ana-
log power = off. SLIMO mode = 0. IMO = 24
MHz.
Conditions are Vdd = 3.3V, T
A
= 25
o
C, CPU = 3
MHz, SYSCLK doubler disabled, VC1 = 1.5
MHz, VC2 = 93.75 kHz, VC3 = 93.75 kHz, ana-
log power = off. SLIMO mode = 0. IMO = 24
MHz.
Conditions are Vdd = 2.7V, T
A
= 25
o
C, CPU =
0.75 MHz, SYSCLK doubler disabled, VC1 =
0.375 MHz, VC2 = 23.44 kHz, VC3 = 0.09 kHz,
analog power = off. SLIMO mode = 1. IMO = 6
MHz.
Conditions are with internal slow speed oscilla-
tor, Vdd = 3.3V, -40
o
C
≤
T
A
≤
55
o
C, analog
power = off.
Conditions are with internal slow speed oscilla-
tor, Vdd = 3.3V, 55
o
C < T
A
≤
85
o
C, analog
power = off.
Conditions are with properly loaded, 1
µW
max,
32.768 kHz crystal. Vdd = 3.3V, -40
o
C
≤
T
A
≤
55
o
C, analog power = off.
I
SBXTLH
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and external crystal at high temperature.
a
Reference Voltage (Bandgap)
Reference Voltage (Bandgap)
–
5
26
µA
Conditions are with properly loaded, 1µW max,
32.768 kHz crystal. Vdd = 3.3 V, 55
o
C < T
A
≤
85
o
C, analog power = off.
V
REF
V
REF27
1.28
1.16
1.30
1.30
1.33
1.33
V
V
Trimmed for appropriate Vdd. Vdd > 3.0V.
Trimmed for appropriate Vdd. Vdd = 2.4V to
3.0V.
I
DD3
Supply Current
–
3.3
6.0
mA
I
DD27
Supply Current
–
2
4
mA
I
SB
Sleep (Mode) Current with POR, LVD, Sleep Timer, and
WDT.
a
Sleep (Mode) Current with POR, LVD, Sleep Timer, and
WDT at high temperature.
a
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and external crystal.
a
–
3
6.5
µA
I
SBH
–
4
25
µA
I
SBXTL
–
4
7.5
µA
a. Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This should be compared with devices that have similar functions
enabled.
October 17, 2006
Document No. 38-12028 Rev. *F
19
CYPRESS [ CYPRESS SEMICONDUCTOR ]
