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CY7C1041CV33-12ZI 参数 Datasheet PDF下载

CY7C1041CV33-12ZI图片预览
型号: CY7C1041CV33-12ZI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16静态RAM [256K x 16 Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 229 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1041CV33
AC Test Loads and Waveforms
[10]
8-, 10-ns Devices
OUTPUT
50
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
1.5V
12-, 15-, 20-ns Devices
Z = 50Ω
3.3V
R 317Ω
30 pF*
OUTPUT
30 pF
R2
351Ω
(a)
(b)
High-Z Characteristics
R 317Ω
3.0V
90%
GND
10%
ALL INPUT PULSES
90%
10%
3.3V
OUTPUT
5 pF
R2
351Ω
Rise Time: 1 V/ns
(c)
Fall Time: 1 V/ns
(d)
Switching Waveforms
Read Cycle No. 1
[11, 12]
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)
ADDRESS
[12, 13]
t
RC
CE
t
ACE
OE
BHE, BLE
t
DOE
t
LZOE
t
DBE
t
LZBE
HIGH IMPEDANCE
t
LZCE
V
CC
SUPPLY
CURRENT
t
PU
50%
t
HZCE
t
HZBE
DATA VALID
t
PD
50%
IISB
SB
IICC
CC
t
HZOE
HIGH
IMPEDANCE
DATA OUT
Notes:
10. AC characteristics (except High-Z) for all 8-ns and 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the
Thevenin load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
11. Device is continuously selected. OE, CE, BHE and/or BHE = V
IL
.
12. WE is HIGH for Read cycle.
13. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05134 Rev. *D
Page 5 of 11