CY7C1049B
Switching Characteristics
Over the Operating Range
[4]
-12
Parameter
Read Cycle
t
power
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
V
CC
(typical) to the First Access
[5]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
[7]
OE HIGH to High Z
[6, 7]
-15
Max.
Min.
1
15
12
15
3
12
6
15
7
0
6
7
3
6
7
0
12
15
15
12
12
0
0
12
8
0
3
6
7
17
12
12
0
0
12
8
0
3
0
3
0
3
Max.
Min.
1
17
-17
Max.
Unit
ms
ns
17
17
8
7
7
17
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
ns
Description
Min.
1
12
3
0
3
0
CE LOW to Low Z
[7]
CE HIGH to High Z
[6, 7]
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
[7]
WE LOW to High Z
[6, 7]
Write Cycle
[8, 9]
12
10
10
0
0
10
7
0
3
Data Retention Characteristics
Over the Operating Range
Parameter
V
DR
I
CCDR
t
CDR[3]
t
R[10]
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Com’l
L V
CC
= V
DR
= 2.0V,
CE > V
CC
– 0.3V
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
Conditions
[11]
Min.
2.0
200
0
t
RC
Max.
Unit
V
µA
ns
ns
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
5. This part has a voltage regulator which steps down the voltage from 5V to 3.3V internally. t
power
time has to be provided initially before a read/write operation
is started.
6. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured
±500
mV from steady-state voltage.
7. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of
these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
10. t
r
< 3 ns for all the speeds
11. No input may exceed V
CC
+ 0.5V.
Document #: 38-05169 Rev. *B
Page 4 of 9
CYPRESS [ CYPRESS SEMICONDUCTOR ]
