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CY7C1021DV33-10ZSXI 参数 Datasheet PDF下载

CY7C1021DV33-10ZSXI图片预览
型号: CY7C1021DV33-10ZSXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 64K ×16 )静态RAM [1-Mbit (64K x 16) Static RAM]
分类和应用:
文件页数/大小: 11 页 / 382 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1021DV33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[4]
.... –0.3V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[4]
......................................–0.3V to V
CC
+0.3V
DC Input Voltage
[4]
...................................–0.3V to V
CC
+0.3V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Range
Industrial
Automotive-A
Automotive-E
Ambient
Temperature
–40°C to +85°C
–40°C to +85°C
–40°C to +125°C
V
CC
3.3V
±
0.3V
Speed
10 ns
10 ns
12 ns
DC Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[4]
Input Leakage Current
Output Leakage Current
V
CC
Operating
Supply Current
GND < V
I
< V
CC
GND < V
I
< V
CC
, Output Disabled
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
100 MHz
83 MHz
66 MHz
40 MHz
I
SB1
I
SB2
Automatic CE Power-Down Max. V
CC
, CE > V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
Current —TTL Inputs
Automatic CE Power-Down Max. V
CC
, CE > V
CC
– 0.3V,
Current —CMOS Inputs
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V, f = 0
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
2.0
−0.3
−1
−1
–10 (Ind’l/Auto-A)
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+1
+1
60
55
45
30
10
3
2.0
−0.3
−5
−5
Max.
–12 (Auto-E)
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+5
+5
-
100
90
60
50
15
Max.
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
Capacitance
[5]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V
Max.
8
8
Unit
pF
pF
Thermal Resistance
[5]
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
SOJ
59.52
36.75
TSOP II VFBGA
53.91
21.24
36
9
Unit
°C/W
°C/W
Notes
4. V
IL
(min.) = –2.0V and V
IH
(max) = V
CC
+ 1V for pulse durations of less than 5 ns.
5. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05460 Rev. *D
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