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CY7C1021-15ZC 参数 Datasheet PDF下载

CY7C1021-15ZC图片预览
型号: CY7C1021-15ZC
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×16静态RAM [64K x 16 Static RAM]
分类和应用:
文件页数/大小: 9 页 / 184 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1021
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[1]
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[1]
......................................–0.5V to V
CC
+0.5V
DC Input Voltage
[1]
..................................–0.5V to V
CC
+0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
[2]
0°C to +70°C
–40°C to +85°C
V
CC
5V
±
10%
5V
±
10%
Electrical Characteristics
Over the Operating Range
Test Conditions
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
OS
I
CC
Description
Output HIGH Voltage V
CC
= Min.,
I
OH
= –4.0 mA
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[1]
Input Load Current
Output Leakage
Current
Output Short
Circuit Current
[3]
V
CC
Operating
Supply Current
GND < V
I
< V
CC
GND < V
I
< V
CC
,
Output Disabled
V
CC
= Max.,
V
OUT
= GND
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
V
CC
= Min.,
I
OL
= 8.0 mA
2.2
−0.5
−1
−1
7C1021-10
Min.
2.4
0.4
6.0
0.8
+1
+1
−300
220
2.2
–0.5
–1
–1
Max.
7C1021-12
Min.
2.4
0.4
6.0
0.8
+1
+1
–300
220
2.2
–0.3
–1
–5
Max.
7C1021-15
Min.
2.4
0.4
6.0
0.8
+1
+5
–300
220
2.2
–0.3
–1
–5
Max.
7C1021-20
Min.
2.4
0.4
6.0
0.8
+1
+5
–300
200
Max.
Unit
V
V
V
V
µA
µA
mA
mA
I
SB1
Automatic CE
Max. V
CC
,
Power-Down Current CE > V
IH
V
IN
> V
IH
or
—TTL Inputs
V
IN
< V
IL
, f = f
MAX
Automatic CE
Max. V
CC
,
Power-Down Current CE > V
CC
– 0.3V,
—CMOS Inputs
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f=0
L
40
40
40
40
mA
I
SB2
5
0.5
5
0.5
5
0.5
5
0.5
mA
mA
Shaded areas contain preliminary information.
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
8
8
Unit
pF
pF
Notes:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. T
A
is the case temperature.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05054 Rev. **
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