CY7C008/009
CY7C018/019
Electrical Characteristics
Over the Operating Range
CY7C008/009
CY7C018/019
-12
Parameter
V
OH
V
OL
V
IH
V
IL
I
OZ
I
CC
Description
Output HIGH Voltage
(V
CC
=Min., I
OH
= –4.0 mA)
Output LOW Voltage
(V
CC
=Min., I
OH
= +4.0 mA)
Input HIGH Voltage
Input LOW Voltage
Output Leakage Current
Operating Current
(V
CC
= Max., I
OUT
=0 mA)
Outputs Disabled
Standby Current
(Both Ports TTL Level)
CE
L
& CE
R
≥
V
IH
, f = f
MAX
Standby Current
(One Port TTL Level)
CE
L
| CE
R
≥
V
IH
, f = f
MAX
Com’l.
Ind.
Com’l.
Ind.
-15
Max.
Min.
2.4
0.4
0.4
2.2
0.8
0.8
–10
190
10
280
–10
10
2.2
Typ.
Max.
Min.
2.4
-20
Typ.
Max.
Unit
V
0.4
V
V
0.8
10
180
305
265
290
65
80
160
175
0.5
0.5
140
155
V
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Min.
2.4
Typ.
2.2
–10
195
325
I
SB1
55
75
50
70
45
60
I
SB2
Com’l.
Ind.
125
205
120
180
110
125
I
SB3
Standby Current
Com’l.
(Both Ports CMOS Level)
Ind.
CE
L
& CE
R
≥
V
CC
– 0.2V, f = 0
Standby Current (One Port
Com’l.
CMOS Level)
Ind.
CE
L
| CE
R
≥
V
IH
, f = f
MAX[10]
0.05
0.5
0.05
0.5
0.05
0.05
I
SB4
115
185
110
160
100
115
.
Capacitance
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
10
10
Unit
pF
pF
Note:
10. f
MAX
= 1/t
RC
= All inputs cycling at f = 1/t
RC
(except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level
standby I
SB3
Document #: 38-06041 Rev. *D
Page 5 of 19
CYPRESS [ CYPRESS SEMICONDUCTOR ]
