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CY62256LL-70SNC 参数 Datasheet PDF下载

CY62256LL-70SNC图片预览
型号: CY62256LL-70SNC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ( 32K ×8 )静态RAM [256K (32K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 395 K
品牌: CYPRESS [ CYPRESS ]
 浏览型号CY62256LL-70SNC的Datasheet PDF文件第1页浏览型号CY62256LL-70SNC的Datasheet PDF文件第2页浏览型号CY62256LL-70SNC的Datasheet PDF文件第3页浏览型号CY62256LL-70SNC的Datasheet PDF文件第5页浏览型号CY62256LL-70SNC的Datasheet PDF文件第6页浏览型号CY62256LL-70SNC的Datasheet PDF文件第7页浏览型号CY62256LL-70SNC的Datasheet PDF文件第8页浏览型号CY62256LL-70SNC的Datasheet PDF文件第9页  
CY62256  
Thermal Resistance  
Description  
Test Conditions  
Symbol  
DIP  
SOIC TSOP RTSOP  
Unit  
Thermal Resistance  
Still Air, soldered on a 4.25 x 1.125  
ΘJA  
75.61 76.56 93.89  
93.89  
°C/W  
(Junction to Ambient)[5]  
inch, 4-layer printed circuit board  
Thermal Resistance  
ΘJC  
43.12 36.07 24.64  
24.64  
°C/W  
(Junction to Case)[5]  
AC Test Loads and Waveforms  
R1 1800  
R1 1800Ω  
5V  
OUTPUT  
5V  
OUTPUT  
ALL INPUT PULSES  
90%  
3.0V  
GND  
90%  
10%  
10%  
R2  
R2  
100 pF  
5 pF  
990Ω  
990Ω  
< 5 ns  
< 5 ns  
INCLUDING  
JIG AND  
SCOPE  
INCLUDING  
JIG AND  
SCOPE  
(a)  
(b)  
Equivalent to:  
THÉVENIN EQUIVALENT  
639Ω  
OUTPUT  
1.77V  
Data Retention Characteristics  
Parameter  
VDR  
ICCDR  
Description  
VCC for Data Retention  
Data Retention Current  
Conditions[6]  
Min.  
2.0  
Typ.[2]  
Max.  
50  
5
10  
10  
Unit  
V
L
LL  
LL - Ind’l  
LL - Auto  
VCC = 3.0V, CE > VCC 0.3V,  
IN > VCC 0.3V, or VIN < 0.3V  
2
µA  
µA  
µA  
µA  
ns  
V
0.1  
0.1  
0.1  
[5]  
tCD[5R]  
tR  
Chip Deselect to Data Retention Time  
Operation Recovery Time  
0
tRC  
ns  
Data Retention Waveform  
DATA RETENTION MODE  
> 2V  
3.0V  
3.0V  
V
V
CC  
DR  
t
t
R
CDR  
CE  
Notes:  
6. No input may exceed V + 0.5V.  
CC  
Document #: 38-05248 Rev. *C  
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