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CG5982AF 参数 Datasheet PDF下载

CG5982AF图片预览
型号: CG5982AF
PDF下载: 下载PDF文件 查看货源
内容描述: 2K ×8汽车双口静态RAM [2K x 8 Automotive Dual-port Static RAM]
分类和应用:
文件页数/大小: 12 页 / 213 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CG5982AF
Switching Waveforms
(continued)
Write Cycle No.1 (OE Three-States Data I/Os—Either Port)
[13, 19]
t
WC
ADDRESS
t
SCE
CE
t
SA
R/W
t
SD
DATA
IN
DATA VALID
t
HD
t
AW
t
HA
t
PWE
OE
t
HZOE
HIGH IMPEDANCE
D
OUT
Write Cycle No. 2 (R/W Three-States Data I/Os—Either Port)
[13, 20]
t
WC
ADDRESS
t
SCE
CE
t
SA
R/W
t
SD
DATA
IN
t
HZWE
D
OUT
Notes:
19. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
PWE
or t
HZWE
+ t
SD
to allow the data I/O pins to enter high impedance
and for data to be placed on the bus for the required t
SD
.
20. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in a high-impedance state.
t
HA
t
AW
t
PWE
t
HD
DATA VALID
t
LZWE
HIGH IMPEDANCE
Document #: 38-06067 Rev. *C
Page 6 of 12