P R E L I M I N A R Y
Test Conditions
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Min
Typ
Max
±1.0
35
Unit
µA
V
V
= V to V
,
CC
IN
SS
I
Input Load Current
LI
= V
CC
CC max
I
A9 Input Load Current
Output Leakage Current
V
= V
; A9 = 12.5 V
µA
LIT
CC
CC max
V
V
= V to V
,
CC
OUT
SS
I
±1.0
µA
LO
= V
CC
CC max
5 MHz
1 MHz
5 MHz
1 MHz
10
2
16
4
CE# = V OE#
Byte Mode
V
IL,
=
=
IH,
IH,
V
Active Read Current
CC
I
mA
CC1
(Note 1)
9
16
4
CE# = V OE#
V
IL,
Word Mode
2
V
Active Write Current
CC
I
I
I
I
CE# = V OE#
V
20
0.2
0.2
0.2
30
5
mA
µA
µA
µA
CC2
CC3
CC4
CC5
IL,
=
IH
(Notes 2 and 4)
V
= V
;
CC max
CC
V
V
Standby Current
Reset Current
CC
CE#, RESET# = V ±0.3 V
CC
V
= V
;
CC max
CC
5
CC
RESET# = V ± 0.3 V
SS
V
V
= V ± 0.3 V;
CC
IH
IL
Automatic Sleep Mode (Note 3)
5
= V ± 0.3 V
SS
V
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
IL
V
V
0.7 x V
V
+ 0.3
IH
CC
CC
Voltage for Autoselect and
Temporary Sector Unprotect
V
= 3.3 V
11.5
12.5
0.45
V
ID
CC
V
Output Low Voltage
I
I
I
= 4.0 mA, V = V
CC min
V
V
OL
OL
OH
OH
CC
V
= –2.0 mA, V = V
0.85 V
OH1
OH2
CC
CC min
CC min
CC
Output High Voltage
V
= –100 µA, V = V
V
–0.4
CC
CC
Low V Lock-Out Voltage
(Note 4)
CC
V
2.3
2.5
V
LKO
Notes:
1. The I current listed is typically less than 2 mA/MHz, with OE# at V . Typical V is 3.0 V.
CC
IH
CC
2. I active while Embedded Erase or Embedded Program is in progress.
CC
3. Automatic sleep mode enables the low power mode when addresses remain stable for t
4. Not 100% tested.
+ 30 ns.
ACC
23
Am29LV400
CYPRESS [ CYPRESS ]
