PRELIMINARY
Electrical Characteristics
Over the Operating Range
Parameter
V
IH
V
Il
IL
I
IL
O
V
OH
V
OL
V
CC
Parameter
I
CC
I
SB1
I
SB2
Description
Input High (Logic 1) Voltage
[2, 3]
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
[2]
Output Low Voltage
[2]
Supply Voltage
[2]
[2, 3]
CY7C1041AV33/
GVT73256A16
Conditions
Min.
2.2
–0.5
Max.
V
CC
+0.5
0.8
5
5
0.4
Unit
V
V
µA
µA
V
V
V
0V < V
IN
< V
CC
Output(s) disabled, 0V < V
OUT
< V
CC
I
OH
= –4.0 mA
I
OL
= 8.0 mA
–5
–5
2.4
3.0
3.6
Description
Conditions
Power
std.
low
std.
low
std.
low
Typ.
90
25
0.1
-10
240
240
70
70
10
3.0
-12
210
210
60
60
10
3.0
Unit
mA
mA
mA
Power Supply
Device selected; CE < V
IL
; V
CC
= Max.;
Current: Operating
[4, 5]
f = f
MAX
; outputs open
TTL Standby
[5]
CMOS Standby
[5]
CE > V
IH
; V
CC
= Max.; f = f
MAX
CE1 > V
CC
– 0.2; V
CC
= Max.;
all other inputs < V
SS
+ 0.2 or > V
CC
– 0.2;
all inputs static; f = 0
Capacitance
[6]
Parameter
C
I
C
I/O
Description
Input Capacitance
Input/Output Capacitance
(DQ)
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 3.3V
Max.
6
8
Unit
pF
pF
Note:
2. All voltages referenced to V
SS
(GND).
3. Overshoot: V
IH
< +6.0V for t < t
RC
/2.
Undershoot: V
IL
< –2.0V for t < t
RC
/2
4. I
CC
is given with no output current. I
CC
increases with greater output loading and faster cycle times.
5. Typical values are measured at 3.3V, 25°C, and 20 ns cycle time.
6. This parameter is sampled.
AC Test Loads and Waveforms
3.3V
DQ
Z
0
= 50
Ω
50Ω
Vt = 1.5V
30 pF
ALL INPUT PULSES
3.3V
90%
90%
10%
≤1.5
ns
Fall Time:
1V/ns
0V
10%
317Ω
DQ
351Ω
5 pF
Rise Time:
1V/ns
(a)
(b)
3
CYPRESS [ CYPRESS SEMICONDUCTOR ]
