PRELIMINARY
Truth Table
Mode
Low Byte Read (DQ
1
–DQ
8
)
High Byte Read (DQ
9
–DQ
16
)
Word Read (DQ
1
–DQ
16
)
Low Byte Write (DQ
1
–DQ
8
)
High Byte Write (DQ
9
–DQ
16
)
Word Write (DQ
1
–DQ
16
)
Output Disable
Standby
CE
L
L
L
L
L
L
L
L
H
WE
H
H
H
L
L
L
X
H
X
OE
L
L
L
X
X
X
X
H
X
BLE
L
H
L
L
H
L
H
X
X
BHE
H
L
L
H
L
L
H
X
X
DQ
1
–D
8
Q
High-Z
Q
D
High-Z
D
High-Z
High-Z
High-Z
CY7C1041AV33/
GVT73256A16
DQ
9
–D
16
High-Z
Q
Q
High-Z
D
D
High-Z
High-Z
High-Z
POWER
Active
Active
Active
Active
Active
Active
Active
Active
Standby
Pin Descriptions
SOJ & TSOP
Pin Numbers
1, 2, 3, 4, 5, 18, 19,
20, 21, 22, 23, 24, 25,
26, 27, 42, 43, 44
17
6
Pin Name
A
0
–A
17
Type
Input
Description
Addresses Inputs: These inputs determine which cell is addressed.
WE
CE
Input
Input
Write Enable: This input determines if the cycle is a READ or WRITE cycle. WE
is LOW for a WRITE cycle and HIGH for a READ cycle.
Chip Enable: This active LOW input is used to enable the device. When CE is
LOW, the chip is selected. When CE is HIGH, the chip is disabled and automati-
cally goes into standby power mode.
Byte Enable: These active LOW inputs allow individual bytes to be written or read.
When BLE is LOW, the data is written to or read from the lower byte (DQ
1
–DQ
8
).
When BHE is LOW, the data is written to or read from the higher byte (DQ
9
–DQ
16
).
Output Enable: This active LOW input enables the output drivers.
SRAM Data I/O: Data inputs and data outputs. Lower byte is DQ
1
–DQ
8
and upper
byte is DQ
9
–DQ
16
.
Power Supply: 3.3V ±0.3V%.
Ground.
Power Dissipation ......................................................... 1.0W
Short Circuit Output Current ....................................... 50 mA
39, 40
BLE, BHE
Input
41
7, 8, 9, 10, 13, 14,
15, 16, 29, 30, 31, 32,
35, 36, 37, 38
11, 33
12, 34
OE
DQ
1
–DQ
16
Input
Input/
Output
Supply
Supply
V
CC
V
SS
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Voltage on V
CC
Supply Relative to V
SS
......... –0.5V to +4.6V
V
IN
...........................................................–0.5V to V
CC
+0.5V
Storage Temperature (plastic)........................–55°C to +125°
Junction Temperature ..................................................+125°
Note:
1. T
A
is the “Instant On” case temperature.
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
[1]
0°C to +70°C
–40°C to +85°C
V
CC
3.3V
±
0.3V
2
CYPRESS [ CYPRESS SEMICONDUCTOR ]
