CY7C199
Switching Characteristics
Over the Operating Range
[3,7]
(continued)
7C199-20
Parameter
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address
Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
[8]
7C199-25
Min.
25
Max.
7C199-35
Min.
35
Max.
7C199-45
Min.
45
Max.
Unit
ns
45
3
ns
ns
45
16
0
15
3
15
0
25
45
22
40
0
0
22
15
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
3
ns
ns
Description
Min.
20
Max.
20
3
20
9
0
9
3
9
0
20
20
15
15
0
0
15
10
0
10
3
3
25
18
20
0
0
18
10
0
0
3
0
3
25
3
25
10
0
11
3
11
0
20
35
22
30
0
0
22
15
0
11
3
35
35
16
15
15
20
OE HIGH to High Z
[8,9]
CE LOW to Low Z
[8]
CE HIGH to High Z
[8,9]
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
[9]
WE HIGH to Low Z
[8]
WRITE CYCLE
[10,11]
15
Switching Waveforms
Read Cycle No. 1
[12, 13]
t
RC
ADDRESS
t
OHA
DATA OUT
PREVIOUS DATA VALID
t
AA
DATA VALID
C199–8
Notes:
12. Device is continuously selected. OE, CE = V
IL
.
13. WE is HIGH for read cycle.
6
CYPRESS [ CYPRESS SEMICONDUCTOR ]
