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5962-8866205NA 参数 Datasheet PDF下载

5962-8866205NA图片预览
型号: 5962-8866205NA
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 32KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 13 页 / 237 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C199
AC Test Loads and Waveforms
[5]
R1 481Ω
5V
OUTPUT
30 pF
INCLUDING
JIGAND
SCOPE
R2
255
5V
OUTPUT
5 pF
INCLUDING
JIGAND
SCOPE
R2
255Ω
3.0V
10%
GND
≤t
r
R1 481Ω
ALL INPUT PULSES
90%
90%
10%
≤t
r
C199–6
C199–5
(a)
(b)
Equivalent to:
THÉVENIN EQUIVALENT
167
1.73V
OUTPUT
Data Retention Characteristics
Over the Operating Range (L version only)
Parameter
V
DR
I
CCDR
t
CDR[4]
t
R[5]
Description
V
CC
for Data Retention
V
CC
= V
DR
= 2.0V,
CE > V
CC
– 0.3V,
Com’l L
V
IN
> V
CC
– 0.3V or
Chip Deselect to Data Retention Time V
IN
< 0.3V
Operation Recovery Time
Data Retention Current
Com’l
Conditions
[6]
Min.
2.0
Max.
Unit
V
µA
10
0
t
RC
µA
ns
ns
Data Retention Waveform
DATA RETENTION MODE
V
CC
3.0V
t
CDR
CE
C199–7
V
DR
> 2V
3.0V
t
R
Notes:
4. Tested initially and after any design or process changes that may affect these parameters.
5. t
R
< 3 ns for the -12 and -15 speeds. t
R
< 5 ns for the -20 and slower speeds.
6. No input may exceed V
CC
+ 0.5V.
4