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CGH40045 参数 Datasheet PDF下载

CGH40045图片预览
型号: CGH40045
PDF下载: 下载PDF文件 查看货源
内容描述: 45 W,射频功率氮化镓HEMT [45 W, RF Power GaN HEMT]
分类和应用: 射频
文件页数/大小: 12 页 / 982 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
Simulated Maximum Stable Gain, Maximum Available  
Gain and K Factor of the CGH40045F  
VDD = 28 V, IDQ = 800 mA  
30  
25  
20  
15  
1.5  
1.13  
0.75  
0.375  
0
10  
0.5  
1.5  
2.5  
3.5  
4.5  
Frequency (GHz)  
Single Tone CW Gain, Efficiency, and Output Power vs Input Power of  
the CGH40045F measured in Amplifier Circuit CGH40045F-TB  
VDD = 28 V, IDQ = 800 mA, Freq = 3.6 GHz  
13  
12  
11  
10  
9
60  
50  
40  
30  
20  
10  
0
Gain  
POUT  
Efficiency  
8
7
0
5
10  
15  
20  
25  
30  
35  
40  
Input Power  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and  
Durham, NC 27703  
the Cree logo are registered trademarks of Cree, Inc.  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com/wireless  
3
CGH40045 Rev ꢀ.ꢀ Preliminary