Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
VGS
Rating
84
Units
Volts
Volts
˚C
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
-10, +2
-55, +150
175
TSTG
TJ
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Thermal Resistance, Junction to
˚C
IGMAX
TS
15
mA
245
˚C
RθJC
2.7
˚C/W
1
Case
Note:
1
Measured for the CGH40045F at 43W PDISS
.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics2
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current3
Drain-Source Breakdown Voltage
Case Operating Temperature4
Screw Torque
VGS(th)
VGS(Q)
IDS
-3.0
–
-2.5
-2.3
10.8
100
–
-1.8
–
VDC
VDC
A
VDS = 10 V, ID = 14.4 mA
VDS = 28 V, ID = 800 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 14.4 mA
PDISS = 43 W
9.6
84
-10
–
–
VBR
TC
–
VDC
˚C
+60
80
T
–
in-oz
Reference 440193 Rev 1
RF Characteristics (TC = 25˚C, F0 = 3.6 GHz unless otherwise noted)
Small Signal Gain
GSS
P3dB
η
11.0
45
12.0
55
–
–
–
dB
W
VDD = 28 V, IDQ = 800 mA
Power Output at 3 dB
Compression
VDD = 28 V, IDQ = 800 mA
Drain Efficiency1
50
55
%
VDD = 28 V, IDQ = 800 mA, POUT = P3dB
No damage at all phase angles,
VDD = 28 V, IDQ = 800 mA,
POUT = 45 W CW
Y
Output Mismatch Stress
VSWR
–
TBD
–
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
19.3
4.6
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
Notes:
Drain Efficiency = POUT / PDC
Measured on wafer prior to packaging.
1.7
1
2
3
4
Scaled from PCM data.
See also, the Power Dissipation De-rating Curve on Page 5.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
2
CGH40045 Rev ꢀ.ꢀ Preliminary