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CGH40010 参数 Datasheet PDF下载

CGH40010图片预览
型号: CGH40010
PDF下载: 下载PDF文件 查看货源
内容描述: 10 W,射频功率氮化镓HEMT [10 W, RF Power GaN HEMT]
分类和应用: 射频
文件页数/大小: 12 页 / 945 K
品牌: CREE [ CREE, INC ]
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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature  
Parameter  
Symbol  
VDSS  
VGS  
Rating  
84  
Units  
Volts  
Volts  
˚C  
Drain-Source Voltage  
Gate-to-Source Voltage  
Storage Temperature  
-10, +2  
-55, +150  
175  
TSTG  
TJ  
Operating Junction Temperature  
Maximum Forward Gate Current  
Soldering Temperature  
Thermal Resistance, Junction to  
˚C  
IGMAX  
TS  
4.0  
mA  
245  
˚C  
RθJC  
5.0  
˚C/W  
1
Case  
Note:  
1
Measured for the CGH40010F at PDISS = 14 W.  
Electrical Characteristics (TC = 25˚C)  
Characteristics  
Symbol  
Min.  
Typ.  
Max.  
Units  
Conditions  
DC Characteristics4  
Gate Threshold Voltage  
Gate Quiescent Voltage  
Saturated Drain Current  
Drain-Source Breakdown Voltage  
Case Operating Temperature  
Screw Torque  
VGS(th)  
VGS(Q)  
IDS  
-3.0  
-2.5  
-2.0  
2.7  
100  
-1.8  
VDC  
VDC  
A
VDS = 10 V, ID = 3.6 mA  
VDS = 28 V, ID = 200 mA  
VDS = 6.0 V, VGS = 2.0 V  
VGS = -8 V, ID = 3.6 mA  
2.4  
84  
-10  
VBR  
TC  
VDC  
˚C  
+105  
60  
T
in-oz  
Reference 440166 Package Revision 3  
RF Characteristics (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)  
Small Signal Gain  
GSS  
P3dB  
η
13.5  
10  
14.5  
12.5  
65  
dB  
W
VDD = 28 V, IDQ = 200 mA  
VDD = 28 V, IDQ = 200 mA  
VDD = 28 V, IDQ = 200 mA, P3dB  
Power Output at 3 dB  
Compression  
Drain Efficiency1,2  
55  
%
No damage at all phase angles,  
VDD = 28 V, IDQ = 200 mA,  
POUT = 12 W CW  
Y
Output Mismatch Stress  
VSWR  
TBD  
Dynamic Characteristics  
Input Capacitance  
CGS  
CDS  
CGD  
5.00  
1.32  
0.43  
pF  
pF  
pF  
VDS = 28 V, Vgs = -8 V, f = 1 MHz  
VDS = 28 V, Vgs = -8 V, f = 1 MHz  
VDS = 28 V, Vgs = -8 V, f = 1 MHz  
Output Capacitance  
Feedback Capacitance  
Notes:  
1
Drain Efficiency = POUT / PDC  
2
When tuned for best efficiency (see the applications chart in this data sheet).  
When tuned for best P1dB (see the applications chart in this data sheet).  
Measured on wafer prior to packaging.  
3
4
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and  
the Cree logo are registered trademarks of Cree, Inc.  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com/wireless  
2
CGH400ꢀ0 Rev ꢀ.4 Preliminary