PRELIMINARY
CGH400ꢀ0
ꢀ0 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40010, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40010 ideal for linear and compressed amplifier circuits.
The transistor is available in both screw-down, flange and solder-
down, pill packages.
FEATURES
APPLICATIONS
• Up to 4 GHz Operation
• 2-Way Private Radio
• 16 dB Small Signal Gain at 2.0 GHz
• 14 dB Small Signal Gain at 4.0 GHz
• 13 W typical P3dB
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
• 65 % Efficiency at P3dB
• 28 V Operation
Subject to change without notice.
www.cree.com/wireless
ꢀ
CREE [ CREE, INC ]
