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C3M0065090J 参数 Datasheet PDF下载

C3M0065090J图片预览
型号: C3M0065090J
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 1336 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
Conditions:  
TJ = -55 °C  
tp < 200 µs  
Conditions:  
TJ = 25 °C  
tp < 200 µs  
VGS = 15 V  
VGS = 15 V  
VGS = 13 V  
VGS = 11 V  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 13 V  
VGS = 11 V  
VGS = 9 V  
VGS = 9 V  
VGS = 7 V  
VGS = 7 V  
0.0  
2.5  
5.0  
7.5  
10.0  
12.5  
15.0  
0.0  
2.5  
5.0  
7.5  
10.0  
12.5  
15.0  
Drain-Source Voltage, VDS (V)  
Drain-Source Voltage, VDS (V)  
Figure 1. Output Characteristics TJ = -55 ºC  
Figure 2. Output Characteristics TJ = 25 ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Conditions:  
TJ = 150 °C  
tp < 200 µs  
VGS = 15 V  
Conditions:  
IDS = 20 A  
VGS = 15 V  
tp < 200 µs  
VGS = 13 V  
VGS = 11 V  
VGS = 9 V  
VGS = 7 V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
2.5  
5.0  
7.5  
10.0  
12.5  
15.0  
Junction Temperature, TJ (°C)  
Drain-Source Voltage, VDS (V)  
Figure 3. Output Characteristics TJ = 150 ºC  
Figure 4. Normalized On-Resistance vs. Temperature  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
Conditions:  
IDS = 20 A  
tp < 200 µs  
Conditions:  
VGS = 15 V  
tp < 200 µs  
TJ = 150 °C  
VGS = 11 V  
VGS = 13 V  
TJ = -55 °C  
TJ = 25 °C  
60  
VGS = 15 V  
40  
20  
0
0
10  
20  
30  
40  
50  
60  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Drain-Source Current, IDS (A)  
Junction Temperature, TJ (°C)  
Figure 5. On-Resistance vs. Drain Current  
For Various Temperatures  
Figure 6. On-Resistance vs. Temperature  
For Various Gate Voltage  
3
C3M0065090J Rev. A