Typical Performance
120
600
500
400
300
200
100
0
Conditions:
TJ ≤ 175 °C
Conditions:
TJ ≤ 175 °C
100
80
60
40
20
0
-55
-30
-5
20
45
70
95
120
145
170
-55
-30
-5
20
45
70
95
120
145
170
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
1
100.00
Limited by RDS On
10 µs
100 µs
1 ms
0.5
0.3
10.00
100 ms
100E-3
0.1
1.00
0.10
0.01
0.05
0.02
0.01
10E-3
1E-3
Conditions:
TC = 25 °C
D = 0,
SinglePulse
Parameter: tp
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
(Junction - Case)
Figure 22. Safe Operating Area
4.0
2.5
2.0
1.5
1.0
0.5
0.0
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0016120K
L = 57.6 μH
Conditions:
TJ = 25 °C
VDD = 800 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0075120D
L = 57.6 μH
ETotal
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ETotal
EOn
EOn
EOff
EOff
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
7
C3M0016120K Rev. -, 04-2019