Typical Performance
250
-10
-8
-6
-4
-2
0
Conditions:
VDS = 20 V
tp < 200 µs
0
200
150
100
50
VGS = -4 V
-50
VGS = 0 V
TJ = -40 °C
-100
-150
-200
-250
TJ = 175 °C
TJ = 25 °C
VGS = -2 V
Conditions:
TJ = -40°C
tp < 200 µs
0
0
2
4
6
8
10
12
Drain-Source Voltage VDS (V)
Gate-Source Voltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
VGS = -4 V
-50
-50
VGS = -4 V
VGS = 0 V
VGS = 0 V
VGS = -2 V
-100
-150
-200
-250
-100
-150
-200
-250
VGS = -2 V
Conditions:
TJ = 25°C
tp < 200 µs
Conditions:
TJ = 175°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 175 ºC
4.0
16
12
8
Conditons
VGS = VDS
IDS = 23 mA
Conditions:
IDS = 20 A
IGS = 50 mA
VDS = 800 V
TJ = 25 °C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
0
-4
-40
-20
0
20
40
60
80
100 120 140 160 180
0
50
100
150
200
250
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
5
C3M0016120K Rev. -, 04-2019
CREE [ CREE, INC ]
