SEMICONDUCTORS
PNP TIP105-106-107
THERMAL CHARACTERISTICS
Symbol
R
thJ-case
R
thJ-amb
From junction-case
From junction-ambient
Ratings
Value
1.56
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
Min
Typ
Max
Unit
I
CBO
Collector Cutoff Current
I
E
= 0,V
CB
= -V
CBO
max
I
E
= 0,
V
CE
= -1/2 V
CEO
max
V
EB
= -5 V, I
C
= 0
-
-
-50
µA
I
CEO
Collector Cutoff Current
-
-
-50
µA
I
EBO
Emitter Cutoff Current
Collector-Emitter
Breakdown Voltage (*)
-
-60
-80
-100
-
-
-
-
-
-
-8
-
-
-
-2
mA
V
CEO
I
C
= -30 mA, I
B
= 0
V
I
C
= -3 A, I
B
= -6 mA
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= -8 A, I
B
= -80 mA
Base-Emitter Voltage
(*)
V
-
-
-2.5
V
BE(on)
I
C
= -8 A, V
CE
= -4 V
-
-
-2.8
V
V
CE
= -4 V, I
C
= -3 A
h
FE
DC Current Gain (*)
V
CE
= -4 V, I
C
= -8 A
I
E
= 0, V
CB
= -10 V,
f = 1MHz
1000
-
20k
-
200
-
-
C
OB
Output Capacitance
-
-
300
pF
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
04/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
