SEMICONDUCTORS
PNP TIP105-106-107
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are designed for general purpose amplifier and low-speed switching
applications.
NPN complements are TIP100-101-102
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Collector-Base Voltage
Ratings
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
Value
-60
-80
-100
-60
-80
-100
-5
Unit
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
-8
A
I
CM
Collector Peak Current
-15
A
I
B
Base Current
-1
A
@ T
c
< 25°
P
T
Power Dissipation
@ T
a
< 25°
80
Watts
2
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
04/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
