SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate
linearly to 110°C case temperature at the rate of 160 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
R∂JC
R∂JA
Junction to case thermal resistance
Junction to free air thermal resistance
≤ 7.8
≤ 62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
Repetitive peak off-
state current
VD = Rated VDRM, , IG = 0,
TC = 110°C
IDRM
-
-
±1
mA
mA
-
-
-
-
-
-
-
-
0.5
-1.5
-2
3.6
0.7
-0.7
-0.8
0.8
5
-5
-5
10
2
-2
-2
2
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
IGT
Gate trigger current
Gate trigger voltage
VGT
V
Vsupply = +12 V†, IG = 0,
initiating ITM = 100 mA
-
-
2
15
Holding current
Latching current
IH
mA
Vsupply = -12 V†, IG = 0,
-4
-15
initiating ITM = -100 mA
Vsupply = +12 V† (seeNote7)
Vsupply = -12 V† (seeNote7)
-
-
-
-
-
30
-30
IL
mA
V
VTM
dv/dt
Peak on-state voltage
Critical rate of rise of
off-state voltage
I
TM = ± 4.2 A, IG = 50 mA (see Note6)
±1.3 ±2.2
VDRM = Rated VDRM, IG = 0
TC = 110°C
-
±50
-
V/µs
Critical rise of
VDRM = Rated VDRM, ITRM = ± 4.2A
communication voltage TC = 85°C
dv/dt©
±1 ±1.3 ±2.5
† All voltages are whit respect to Main Terminal 1.
Page 2 of 3
COMSET [ COMSET SEMICONDUCTOR ]
