SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
•
•
•
•
•
•
4 A RMS
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 5 mA (Quadrants 1-3)
Sensitive gate triacs
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Value
Unit
Symbol
Ratings
A
B
D
M
S
N
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak on-state surge current half-sine-wave
(see Note4)
Peak gate current
VDRM
IT(RMS)
ITSM
100
200
400
600
700
800
V
A
A
4
25
30
ITSM
IGM
A
A
± 0.2
1.3
Peak gate power dissipation at (or below)
85°C case temperature (pulse width ≤200
µs)
PGM
W
Average gate power dissipation at (or
below) 85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
PG(AV)
0.3
W
TC
Tstg
-40 to +110
-40 to +125
°C
°C
TL
230
°C
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