SEMICONDUCTORS
IRF630
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
Ratings
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source leakage Current
Drain-Source on Resistance
Test Condition(s)
I
D
= 250 µA, V
GS
= 0 V
I
D
=1 mA, V
GS
= V
DS
V
DS
= 200 V, V
GS
= 0 V
T
j
= 25 °C
V
DS
= 200 V, V
GS
= 0 V
T
j
= 125 °C
V
GS
= 20 V, V
DS
= 0 V
I
D
= 5.4 A, V
GS
= 10 V
Min
200
2
-
-
-
-
Typ
-
3
-
-
-
0.35
Max
-
4
10
Unit
V
V
µA
50
100
0.4
nA
Ω
DYNAMIC CHARACTERISTICS
Symbol
g
fs
C
ISS
C
OSS
C
RSS
t
d(on)
t
r
t
d(off)
t
f
Ratings
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
Test Condition(s)
V
DS
= 2*I
D
*R
DS(on)max
I
D
= 5 A
V
GS
= 0 V, V
DS
= 25 V
f= 1MHz
Min
3
-
-
-
-
-
-
-
Typ
4
540
90
35
10
15
25
15
Max Unit
-
700
120
50
-
-
-
-
pF
S
V
DD
= 100 V, V
GS
= 10 V
I
D
= 4.5 A, R
GS
= 4.7
Ω
ns
REVERSE DIODE
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Ratings
Inverse Diode Continuous
Forward Current.
Inverse diode direct current,
pulsed.
Inverse Diode Forward voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Condition(s)
T
C
= 25°C
T
C
= 25°C
V
GS
= 0 V, I
F
= 9 A
V
R
= 50 V, I
F
= 9 A
di/dt = 100 A/µs
T
C
= 150°C
Min
-
-
-
-
-
Typ
-
-
-
170
0.95
Max
9
Unit
A
36
2
-
-
V
ns
µC
MECHANICAL DATA CASE TO-220
01/10/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
