SEMICONDUCTORS
IRF630
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in high speed switching,
uninterruptible power supply, motor control, audio amplifiers,
industrial actuators.
DC-DC & DC-AC converters for telecom, industrial and
consumer environment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
I
DS
I
DM
I
AR
E
AS
E
AR
V
GS
R
DS(on)
P
T
t
J
t
stg
Ratings
Drain-Source Voltage
Continuous Drain Current T
C
= 37°C
Pulsed Drain Current T
C
= 25°C
Avalanche Current, Limited by T
jmax
Avalanche Energy, Single pulse
I
D
= 2.4 A, V
DD
= 50 V, R
GS
= 25
Ω,
L= 56.3 µH, T
j
= 25°C
Avalanche Energy, Periodic Limited by T
jmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T
C
= 25°C
Operating Temperature
Storage Temperature range
Value
200
9
36
9
250
7.4
20
0.4
74
-55 to +150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
1.7
62
Unit
°C/W
01/10/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
