ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CES
V
CE0(SUS)
I
EBO
V
CE(SAT)
V
BE(SAT)
V
F
H
FE
f
T
C
c
t
s
t
f
Ratings
Collector Cutoff Current
Collector-Emitter
Sustaining Voltage
Emitter Cutoff Current
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
Forward Voltage
DC Current Gain
Transition frequency
Collector capacitance
Storage Time
Fall Time
Test Condition(s)
V
CE
= V
CESM
= 1500 V , V
BE
= 0
V
CE
= V
CESM
= 1500 V , V
BE
= 0
,
T
j
=125°C
I
C
=0.1A , I
B
=0, L=25mH
V
EB
=6.0 V, I
C
=0
I
C
=4.5A , I
B
=2 A
I
C
=4.5 A , I
B
=2 A
I
F
=4.5 A
I
C
=100 mA , V
CE
=5.0 V
V
CE
=5 V , I
C
=0.1 A, f=5MHz
I
E
= i
e
= 0, V
CB
=10 V, f=1 MHz
-V
IM
= 4V, L
B
= 6µH
I
C
=I
Csat
, I
B
= 1.4A(-d
IB
/dt= 0.6A/µs)
Min Typ Mx Unit
-
-
700
-
-
-
-
5
-
-
-
-
-
-
-
-
-
-
1.6
13
7
125
6.5
0.7
1
2
-
10
1.0
V
1.3
2
30
-
-
-
-
V
-
MHz
pF
µs
mA
V
mA
MECHANICAL DATA CASE SOT199
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
*
COMSET SEMICONDUCTORS
2/2
COMSET [ COMSET SEMICONDUCTOR ]
