NPN BU508DF
SILICON DIFFUSED POWER TRANSISTORS
The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for
the BU508DF).
They are a high voltage, high speed switching and they are intended for use in horizontal deflexion
circuits of colour television receivers.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CESM
I
C
I
CM
I
B
I
Csat
I
BM
P
t
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Collector Current saturation
Base Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I
B
= 0
V
BE
= 0
Value
700
1500
8
15
4
4.5
6
34
150
-65 to +150
Unit
V
V
A
A
A
A
A
Watts
°C
°C
@ T
C
= 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
R
thJ-h
R
thJ-h
R
thJ-a
Ratings
Thermal Resistance, Junction to Mounting Base
Thermal Resistance, Junction to Hexternal Heatsink
Thermal Resistance, Junction to Hexternal Heatsink
Thermal Resistance, Junction to Ambient
Value
1.0
3.7
2.8
35
Unit
K/W
K/W
K/W
K/W
ISOLATION
Symbol
V
ISOL
C
ISOL
Ratings
Isolation Voltage from all terminals to external
heatsink (peak value)
Isolation capacitance from collector to external
heatsink
Value
1500
Typ.
Unit
V
pF
21
*
COMSET SEMICONDUCTORS
1/2
COMSET [ COMSET SEMICONDUCTOR ]
