NPN BDY57 – BDY58
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CER
I
EBO
V
CE(SAT)
Ratings
Collector-Emitter
Breakdown Voltage (*)
Collector-Base
Breakdown Voltage (*)
Emitter-Base Breakdown
Voltage (*)
Collector-Base Cutoff
Current
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff
Current
Collector-Emitter
saturation Voltage (*)
Test Condition(s)
I
C
=100 mA, I
B
=0
I
C
=5.0mA, I
E
=0
I
E
=5.0 A, I
C
=0
V
CB
=120 V, I
E
=0 V
V
CE
=80 V, R
BE
=10
T
CASE
=100°C
V
EB
=10 V, I
C
=0 V
I
C
=10 A, I
B
=1.0 A
V
CE
=4 V, I
C
=10 A
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
Min
80
125
120
160
-
-
-
-
-
-
20
-
10
10
-
-
Typ
-
-
-
-
0.5
-
-
-
0.25
0.5
-
15
-
30
0.25
1
Max Unit
-
-
-
-
1.4
1.0
0.5
10
0.5
1.4
60
-
-
-
1
2
MHz
µs
µs
V
V
V
V
mA
mA
mA
V
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=20 A
V
CE
=4 V, I
C
=10 A
T
CASE
=-30°C
V
CE
=15 V, I
C
=1.0 A
f=10 MHz
I
C
=15 A, I
B
=1.5 A
I
C
=15 A, I
B1
=1.5 A
I
B2
=-1.5 A
f
T
t
d + tr
t
s + tf
Transition Frequency
Turn-on time
Turn-off time
(*) Pulse Width ≈ 300 µs, Duty Cycle
∠
2.0%
09/11/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
