NPN BDY57 – BDY58
SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J TS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
@ TC = 25°
Junction Temperature Storage Temperature
Ratings
BDY57
BDY58
BDY57
BDY58
Value
80
125
120
160
10
25
6
175
-65 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
09/11/2012
COMSET SEMICONDUCTORS
1|3