COMSET
SEMICONDUCTORS
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter Cutoff
Current
Test Condition(s)
BDY26, 183T2
BDY27, 184T2
BDY28A, 185T2A
BDY28B, 185T2B
BDY28C, 185T2C
BDY26
BDY27
BDY28
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Min Typ Mx Unit
180
200
250
250
220
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
V
CEO(BR)
I
C
=50 mA, I
B
=0
V
I
CEO
V
CE
=180 V
V
CE
=200 V
V
CE
=250 V
mA
I
EBO
Emitter-Base Cutoff Current
V
EB
=10 V
V
CE
=250 V
V
BE
=0 V
1.0
mA
-
-
-
-
-
-
1.0
mA
I
CES
Collector-Emitter Cutoff
Current
V
CE
=300 V
V
BE
=0 V
V
CE
=400 V
V
BE
=0 V
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COMSET [ COMSET SEMICONDUCTOR ]
