BDX66 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
Min
60
80
100
120
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2000
Max
-
-
-
-
3
Unit
-V
CEO(SUS)
Collector-Emitter Breakdown -I
C
=0.1 A
L=25mH
Voltage (*)
-V
CE
=30 V
-V
CE
=40 V
-V
CE
=50 V
-V
CE
=60 V
-V
BE
=5 V
-V
CB
=60 V
-V
CB
=40 V
T
CASE
=200°C
-V
CB
=80 V
-V
CB
=50 V
T
CASE
=200°C
-V
CB
=100 V
-V
CB
=60 V
T
CASE
=200°C
-V
CB
=120 V
-V
CB
=70 V
T
CASE
=200°C
-V
CE
=3 V
- I
C
=1 A
V
-I
CEO
Collector Cutoff Current
mA
-I
EBO
Emitter Cutoff Current
5.0
1
5
1
5
1
5
1
5
mA
-I
CBO
Collector-Base Cutoff
Current
mA
BDX66B
-
-
BDX66C
-
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
-
-
h
FE
DC Current Gain
-V
CE
=3 V
- I
C
=10 A
1000
-
-
-
-V
CE
=3 V
- I
C
=16 A
-
1000
-
24/10/2012
COMSET SEMICONDUCTORS
2/4
COMSET [ COMSET SEMICONDUCTOR ]
