BDX66 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX67, BDX67A, BDX67B, BDX67C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
-I
C(RMS)
-I
CM
@ T
C
= 25°
Value
60
80
100
120
60
80
100
120
5.0
16
20
0.25
150
-55 to +200
Unit
-V
CEO
Collector-Emitter Voltage
V
-V
CBO
-V
EBO
-I
C
-I
B
P
T
T
J
T
S
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1/4
COMSET [ COMSET SEMICONDUCTOR ]
