SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
= 0
V
CB
= -45 V
I
E
= 0
V
CB
= -60 V
T
C
=25°C
I
E
= 0
V
CB
= -80 V
I
E
= 0
V
CB
= -100 V
I
E
= 0
V
CB
= -45 V
I
E
= 0
V
CB
= -60 V
T
C
=100°
C
I
E
= 0
V
CB
= -80 V
I
E
= 0
V
CB
= -100 V
I
E
= 0, V
CE
= - 30 V
I
E
= 0, V
CE
= - 30 V
I
E
= 0, V
CE
= - 40 V
I
E
= 0, V
CE
= - 50 V
V
EB
= -5 V, I
C
= 0
BD896
BD898
Min
Typ
Max
Unit
-
BD900
BD902
BD896
BD898
-
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
-
-0.2
mA
I
CBO
Collector Cutoff
Current
-
-2
mA
I
CEO
Collector Cutoff
Current
-
-
-0.5
mA
I
EBO
Emitter Cutoff
Current
-
-45
-60
-80
-100
-
-
-
-
-
-
-
-2
-
-
-
-
-2.5
mA
V
CEO
Collector-Emitter
Breakdown Voltage
(*)
I
C
= -100 mA, I
B
= 0
V
V
CE(SAT)
Collector-Emitter
I = -3 A, I
B
= -12 mA
saturation Voltage (*)
C
V
25/09/2012
COMSET SEMICONDUCTORS
2|4
COMSET [ COMSET SEMICONDUCTOR ]
