SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,
and analogue switching application.
NPN complements are BD895 - BD897 - BD899 - BD901
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
T
c
= 25°
T
a
= 25°
Value
-45
-60
-80
-100
-45
-60
-80
-100
-5
Unit
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
-8
A
I
B
Base Current
-300
mA
P
T
T
J
T
s
Power Dissipation
Junction Temperature
Storage Temperature range
70
2
150
-65 to +150
Watts
°C
25/09/2012
COMSET SEMICONDUCTORS
1|4
COMSET [ COMSET SEMICONDUCTOR ]
