欢迎访问ic37.com |
会员登录 免费注册
发布采购

APT6030BN 参数 Datasheet PDF下载

APT6030BN图片预览
型号: APT6030BN
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET晶体管 [N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS]
分类和应用: 晶体晶体管开关脉冲高压局域网高电压电源
文件页数/大小: 4 页 / 123 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号APT6030BN的Datasheet PDF文件第1页浏览型号APT6030BN的Datasheet PDF文件第2页浏览型号APT6030BN的Datasheet PDF文件第4页  
APT6030BN  
REVERSE DIODE  
Symbol  
Ratings  
Test Condition(s)  
Min Typ Max Unit  
IS  
ISM  
VSD  
Continuous Source Current. (Body Diode)  
Pulsed Source Current. (Body Diode)  
-
-
-
-
-
-
23  
92  
1.3  
A
Diode Forward Voltage  
V
GS = 0 V, Is = -ID(Cont)  
V
Trr  
Reverse Recovery Time  
-
480  
960  
ns  
Is = -ID(Cont)  
di/dt = 100 A/µs  
Qrr  
Reverse Recovery Charge  
-
8
16  
µC  
SAFE OPERATING AREA CHARACTERISTICS  
Symbol  
SOA1  
Ratings  
Test Condition(s)  
Min Typ Max Unit  
VDS= 0.4VDSS  
IDS= PD/0.4VDSS  
t= 1 sec  
Safe Operating Area  
360  
W
IDS= ID(Cont)  
VDS= PD/ ID(Cont)  
t= 1 sec  
SOA2  
ILM  
Safe Operating Area  
360  
92  
W
A
Inductive Current Clamped  
22/10/2012  
COMSET SEMICONDUCTORS  
3/4  
 复制成功!